SW040R03VLT - N-channel Enhanced mode TO-252 MOSFET

Samwin

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

High ruggedness.
Low RDS(ON) (Typ 5.1mΩ)@VGS=4.5V (Typ 3.7mΩ)@VGS=10V.
Low Gate Charge (Typ 59nC).
Improved dv/dt Capability.
100% Avalanche Tested.

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SW040R03VLT n-channel enhanced mode to-252 mosfet by Samwin - Datasheet Preview

Datasheet Details

Part number	SW040R03VLT
Manufacturer	Samwin
File Size	539.31 KB
Description	N-channel Enhanced mode TO-252 MOSFET
Datasheet	SW040R03VLT Datasheet

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SW040R03VLT N-channel Enhanced mode TO-252 MOSFET Features ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 5.1mΩ)@VGS=4.5V (Typ 3.7mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 59nC) ⚫ Improved dv/dt Capability ⚫ 100% Avalanche Tested ⚫ Application:Synchronous Rectification, Li Battery Protect Board, Inverter TO-252 12 3 1. Gate 2.Drain 3.Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 30V ID : 100A RDS(ON) : 5.1mΩ@VGS=4.5V 3.