Datasheet Summary
N-channel Enhanced mode TO-252 MOSFET
Features
- High ruggedness
- Low RDS(ON) (Typ 5.1mΩ)@VGS=4.5V
(Typ 3.7mΩ)@VGS=10V
- Low Gate Charge (Typ 59nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
TO-252
12 3
1. Gate 2.Drain 3.Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
BVDSS : 30V
: 100A
RDS(ON) : 5.1mΩ@VGS=4.5V
3.7mΩ@VGS=10V
2 1
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