SW065R68E7T - N-channel MOSFET

Samwin

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

TO-252.
High ruggedness.
Low RDS(ON) (Typ 6.3mΩ)@VGS=10V.
Low Gate Charge (Typ 75nC).
Improved dv/dt Capability.
100% Avalanche Tested.

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SW065R68E7T n-channel mosfet by Samwin - Datasheet Preview

Datasheet Details

Part number	SW065R68E7T
Manufacturer	Samwin
File Size	683.48 KB
Description	N-channel MOSFET
Datasheet	SW065R68E7T Datasheet

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Full PDF Text Transcription (Reference)

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SW065R68E7T N-channel Enhanced mode TO-252 MOSFET Features TO-252  High ruggedness  Low RDS(ON) (Typ 6.3mΩ)@VGS=10V  Low Gate Charge (Typ 75nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Synchronous Rectification, Li Battery Protect Board, Inverter 12 3 1. Gate 2.Drain 3.Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.