SW065R68E7T Description
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Drain current is limited by junction temperature.
SW065R68E7T Key Features
- High ruggedness
- Low RDS(ON) (Typ 6.3mΩ)@VGS=10V
- Low Gate Charge (Typ 75nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:Synchronous Rectification