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SW13N65D Datasheet N-channel MOSFET

Manufacturer: Samwin

Datasheet Details

Part number SW13N65D
Manufacturer Samwin
File Size 818.71 KB
Description N-channel MOSFET
Download SW13N65D Download (PDF)

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

BVDSS : 650V ID : 13A RDS(ON) : 0.6Ω 2 1 3 Order Codes Item Sales Type Marking Package Packaging 1 SW F 13N65D SW13N65D TO-220F TUBE Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy Peak diode recovery dv/dt (note 1) (note 2) (note 1) (note 3) Total power dissipation (@TC=25oC) PD Derating factor above 25oC TSTG, TJ TL Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds.

Overview

SW13N65D.

Key Features

  • N-channel Enhanced mode TO-220F MOSFET.
  • High ruggedness.
  • Low RDS(ON) (Typ 0.6Ω)@VGS=10V.
  • Low Gate Charge (Typ 54nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.