Datasheet Details
| Part number | SW160R02VT |
|---|---|
| Manufacturer | Samwin |
| File Size | 754.67 KB |
| Description | N-channel MOSFET |
| Download | SW160R02VT Download (PDF) |
|
|
| Part number | SW160R02VT |
|---|---|
| Manufacturer | Samwin |
| File Size | 754.67 KB |
| Description | N-channel MOSFET |
| Download | SW160R02VT Download (PDF) |
|
|
|
S This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Order Codes Item Sales Type Marking Package Packaging 1 SW H 160R02VT SW160R02V DFN3*3 REEL Absolute maximum ratings Symbol Parameter Value Unit VDSS ID IDM VGS dv/dt Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Peak diode recovery dv/dt (note 1) (note 3) 20 16* 10* 64 ±10 5 V A A A V V/ns Total power dissipation (@TC=25oC) PD Derating factor above 25oC 2.97 0.02 W W/oC TSTG, TJ Operating junction temperature & storage temperature -55 ~ + 150 oC *.
SW160R02VT.
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