SW160R02VT Overview
S This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Drain current is limited by junction temperature.
SW160R02VT Key Features
- High ruggedness
- Low RDS(ON) (Typ 12.3mΩ)@VGS=2.5V
- Low Gate Charge (Typ 15.4nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:DC-DC Converter, Inverter