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SW18N65D Datasheet N-channel MOSFET

Manufacturer: Samwin

Datasheet Details

Part number SW18N65D
Manufacturer Samwin
File Size 932.69 KB
Description N-channel MOSFET
Download SW18N65D Download (PDF)

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

BVDSS : 650V ID : 18A RDS(ON) : 0.35Ω 2 1 3 Order Codes Item Sales Type 1 SW F 18N65D 2 SW T 18N65D Absolute maximum ratings Marking SW18N65D SW18N65D Package TO-220F TO-247 Packaging TUBE TUBE Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy Peak diode recovery dv/dt (note 1) (note 2) (note 1) (note 3) Total power dissipation (@TC=25oC) PD Derating factor above 25oC TSTG, TJ Operating junction temperature & storage temperature Maximum lead temperature for soldering TL purpose, 1/8 from case for 5 seconds.

Overview

SW18N65D N-channel Enhanced mode TO-220F/TO-247 MOSFET.

Key Features

  • TO-220F TO-247.
  • High ruggedness.
  • Low RDS(ON) (Typ 0.35Ω)@VGS=10V.
  • Low Gate Charge (Typ 79nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.