SW22N65D - N-channel MOSFET

Samwin

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

TO-247.
High ruggedness.
Low RDS(ON) (Typ 0.22Ω)@VGS=10V.
Low Gate Charge (Typ 123nC).
Improved dv/dt Capability.
100% Avalanche Tested.

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SW22N65D n-channel mosfet by Samwin - Datasheet Preview

Datasheet Details

Part number	SW22N65D
Manufacturer	Samwin
File Size	643.93 KB
Description	N-channel MOSFET
Datasheet	SW22N65D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SW22N65D N-channel Enhanced mode TO-247 MOSFET Features TO-247  High ruggedness  Low RDS(ON) (Typ 0.22Ω)@VGS=10V  Low Gate Charge (Typ 123nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: LED , Charger, PC Power 1 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 650V ID : 22A RDS(ON) : 0.