Datasheet Details
| Part number | SW6N60D |
|---|---|
| Manufacturer | Samwin |
| File Size | 835.93 KB |
| Description | N-channel MOSFET |
| Datasheet | SW6N60D-Samwin.pdf |
|
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Overview: SW6N60D N-channel Enhanced mode TO-220F/TO-252/TO-251N MOSFET.
| Part number | SW6N60D |
|---|---|
| Manufacturer | Samwin |
| File Size | 835.93 KB |
| Description | N-channel MOSFET |
| Datasheet | SW6N60D-Samwin.pdf |
|
|
|
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Order Codes BVDSS : 600V ID : 6A RDS(ON) :1.4Ω 2 1 3 Item Sales Type 1 SW F 6N60D 2 SW D 6N60D 3 SW N 6N60D Marking SW6N60D SW6N60D SW6N60D Package TO-220F TO-252 TO-251N Packaging TUBE REEL TUBE Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy (note 1) (note 2) (note 1) dv/dt Peak diode recovery dv/dt (note 3) Total power dissipation (@TC=25oC) PD Derating factor above 25oC TSTG, TJ Operating junction temperature & storage temperature Maximum lead temperature for soldering TL purpose, 1/8 from case for 5 seconds.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
SW6N60 | MOSFET | SEMIPOWER |
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