FMG50AQ120N6 Datasheet | SanRex Corporation

Si C MOSFET (Through Hole/Isolated) Same package as the product in this photo. - TO-247-4L package Si C MOSFET VRRM = 1200V IT(AV) ＝ 50A ① ④ ③ ② ① Drain ② Source ③ Sence ④ Gate Advantages - Low power loss thanks to loss RDS(on) and low switching loss. - Low temperature dependency of RDS(on) reducing thermal runaway risks at high temperature operation - Safe gate driving at high frequency operation through optimized VGS(th)(4.0V) - The four-pin TO-247-4L package further enhancing the high-speed switching performance of Si C MOSFET - Top level short circuit tolerance enabling safety design of equipment - No additional FWD required Applications - Industrial Inverters, DC-DC Converters, EV Battery Chargers, Resonant Power Supply Apr.2022 ① ②③④ 1/ 16 Si C MOSFET (Through Hole/Isolated) Same package as the product in this photo. - TO-247-4L package Si C MOSFET VRRM = 1200V IT(AV) ＝...