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DS065016C3 - SiC Schottky Barrier Diode

General Description

VRRM 650 V IF(135℃) 21 A QC 44 nC TO-220-2L PIN 1 PIN 2 CASE Device SDS065J016C3 Package TO-220-2L Marking DS065016C3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 65

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Datasheet Details

Part number DS065016C3
Manufacturer Sanan
File Size 266.77 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet DS065016C3 Datasheet

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Datasheet SDS065J016C3 650V/16A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive,traction ➢ Charging pile Product Description VRRM 650 V IF(135℃) 21 A QC 44 nC TO-220-2L PIN 1 PIN 2 CASE Device SDS065J016C3 Package TO-220-2L Marking DS065016C3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =25℃ Reverse voltage (DC) VDC 650 TC =25℃ 44 TC =25℃ Continuous forward current IF 21 A TC =135℃