Datasheet4U Logo Datasheet4U.com

DS065016G3 - SiC Schottky Barrier Diode

Description

VRRM 650 V IF(135℃) 24 A QC 22 nC TO-247-3L Marking DS065016G3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current (Per Leg/Device) Surge non-

📥 Download Datasheet

Datasheet preview – DS065016G3

Datasheet Details

Part number DS065016G3
Manufacturer Sanan
File Size 288.81 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet DS065016G3 Datasheet
Additional preview pages of the DS065016G3 datasheet.
Other Datasheets by Sanan

Full PDF Text Transcription

Click to expand full text
Datasheet ADS065J016G3 650V/16A SiC Schottky Barrier Diode Characteristic ➢ AEC-Q101 Qualified ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive,traction ➢ Charging pile Device ADS065J016G3 Package TO-247-3L Product Description VRRM 650 V IF(135℃) 24** A QC 22* nC TO-247-3L Marking DS065016G3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current (Per Leg/Device) Surge non-repetitive forward current Repetitive Peak Forward Surge Current To
Published: |