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SDS065J008C2 - SiC Schottky Barrier Diode

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VRRM 650 V IF(135℃) 11 A QC 23 nC TO-220-2L PIN 1 PIN 2 CASE Marking DS065008C2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =25℃ Reverse voltage (DC) VDC

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Part number SDS065J008C2
Manufacturer Sanan
File Size 312.50 KB
Description SiC Schottky Barrier Diode
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Datasheet SDS065J008C2 650V/8A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive,traction ➢ Charging pile Device SDS065J008C2 Package TO-220-2L Product Description VRRM 650 V IF(135℃) 11 A QC 23 nC TO-220-2L PIN 1 PIN 2 CASE Marking DS065008C2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =25℃ Reverse voltage (DC) VDC 650 TC =25℃ 23 TC =25℃ Continuous forward current IF 11 A TC =135℃
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