SDS065J008C3 Datasheet PDF - Sanan SiC Schottky Barrier Diode Specs

SDS065J008C3 - SiC Schottky Barrier Diode

Datasheet Summary

Description

VRRM 650 V IF(135℃) 12 A QC 22 nC TO-220-2L PIN 1 PIN 2 CASE Marking DS065008C3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =25℃ Reverse voltage (DC) VDC

Datasheet Details

Part number	SDS065J008C3
Manufacturer	Sanan
File Size	277.87 KB
Description	SiC Schottky Barrier Diode
Datasheet	SDS065J008C3 Datasheet
Additional preview pages of the SDS065J008C3 datasheet.

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Full PDF Text Transcription

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Datasheet SDS065J008C3 650V/8A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive，traction ➢ Charging pile Device SDS065J008C3 Package TO-220-2L Product Description VRRM 650 V IF(135℃) 12 A QC 22 nC TO-220-2L PIN 1 PIN 2 CASE Marking DS065008C3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =25℃ Reverse voltage (DC) VDC 650 TC =25℃ 25 TC =25℃ Continuous forward current IF 12 A TC =135℃ 8

Published: Nov 3, 2024 |