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SDS065J010E2 - SiC Schottky Barrier Diode

General Description

VRRM 650 V IF(135℃) 12 A QC 28 nC TO-263-2L PIN 1 CASE PIN 2 Marking DS065010E2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =25℃ Reverse voltage (DC) VDC 65

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Datasheet Details

Part number SDS065J010E2
Manufacturer Sanan
File Size 315.24 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SDS065J010E2 Datasheet

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Datasheet SDS065J010E2 650V/10A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive,traction ➢ Charging pile Device SDS065J010E2 Package TO-263-2L Product Description VRRM 650 V IF(135℃) 12 A QC 28 nC TO-263-2L PIN 1 CASE PIN 2 Marking DS065010E2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =25℃ Reverse voltage (DC) VDC 650 TC =25℃ 26 TC =25℃ Continuous forward current IF 12 A TC =135℃ 1