SDS065J010E2 Datasheet PDF - Sanan SiC Schottky Barrier Diode Specs

SDS065J010E2 - SiC Schottky Barrier Diode

Datasheet Summary

Description

VRRM 650 V IF(135℃) 12 A QC 28 nC TO-263-2L PIN 1 CASE PIN 2 Marking DS065010E2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =25℃ Reverse voltage (DC) VDC 65

Datasheet Details

Part number	SDS065J010E2
Manufacturer	Sanan
File Size	315.24 KB
Description	SiC Schottky Barrier Diode
Datasheet	SDS065J010E2 Datasheet
Additional preview pages of the SDS065J010E2 datasheet.

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Full PDF Text Transcription

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Datasheet SDS065J010E2 650V/10A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive，traction ➢ Charging pile Device SDS065J010E2 Package TO-263-2L Product Description VRRM 650 V IF(135℃) 12 A QC 28 nC TO-263-2L PIN 1 CASE PIN 2 Marking DS065010E2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =25℃ Reverse voltage (DC) VDC 650 TC =25℃ 26 TC =25℃ Continuous forward current IF 12 A TC =135℃ 1

Published: Nov 4, 2024 |