SDS065J010S3 Datasheet PDF - Sanan SiC Schottky Barrier Diode Specs

SDS065J010S3 - SiC Schottky Barrier Diode

Datasheet Summary

Description

VRRM 650 V IF(135℃) 18 A QC 29 nC DFN 8 8-4L Device SDS065J010S3 Package DFN 8 8-4L Marking DS065010S3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =

Datasheet Details

Part number	SDS065J010S3
Manufacturer	Sanan
File Size	249.82 KB
Description	SiC Schottky Barrier Diode
Datasheet	SDS065J010S3 Datasheet
Additional preview pages of the SDS065J010S3 datasheet.

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Full PDF Text Transcription

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Datasheet 650V/10A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive，traction ➢ Charging pile SDS065J010S3 Product Description VRRM 650 V IF(135℃) 18 A QC 29 nC DFN 8*8-4L Device SDS065J010S3 Package DFN 8*8-4L Marking DS065010S3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =25℃ Reverse voltage (DC) VDC 650 TC =25℃ 38 TC =25℃ Continuous forward current IF 18 A TC =135℃ 10 TC =155℃ Surg

Published: Nov 3, 2024 |