2SC5071
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) s Absolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5071 500 400 10 12(Pulse24) 4 100(Tc=25°C) 150
- 55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 s Electrical Characteristics
Symbol ICBO IEBO V(BR)CEO h FE VCE(sat) VBE(sat) f T COB Conditions VCB=500V VEB=10V IC=25m A VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=- 1A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ
(Ta=25°C) 2SC5071 Unit
µA µA
19.9±0.3
V V V MHz p F
4.0 a b
ø3.2±0.1
20.0min
4.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 s Typical Switching Characteristics (mon Emitter)
VCC (V) 200 RL (Ω) 28.5 IC (A) 7 VBB1 (V) 10 VBB2 (V)
- 5 IB1 (A) 0.7 IB2 (A)
- 1.4 ton (µs) 1.0max tstg (µs) 3.0max tf (µs) 0.5max
5.45±0.1 B C E
5.45±0.1
Weight :...
