The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Equivalent circuit
C
Darlington
2SD2558
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=5V, IC=1A IC=1A, IB=5mA VCE=10V, IE=–0.5A VCB=10V, f=1MHz 2SD2558 100max 5max 200min 1500 to 6500 1.5max 15typ 110typ V MHz
16.2
B
(7 0 Ω )
E
Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2558 200 200 6 5 2 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Series Regulator and General Purpose
(Ta=25°C) Unit
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
µA
23.0±0.3
V
9.5±0.2
mA
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1
3.3
0.8
3.