isc Silicon NPN Darlington Power Transistor DESCR.
2SD2558 - Silicon NPN Transistor
Equivalent circuit C Darlington 2SD2558 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=10m.D2558 - 2SD2558
2SD2558Darlington Equivalent circuit B C (70Ω) E Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator and General Purpose.2SD2558 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High DC Current Gain- : hFE= 150.