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2SD2558Darlington
Equivalent circuit B
C
(70Ω) E
Silicon NPN Triple Diffused Planar Transistor
Application : Series Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg
2SD2558 200 200 6 5 2
60(Tc=25°C) 150
–55 to +150
Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB
Conditions VCB=200V
VEB=6V IC=10mA VCE=5V, IC=1A IC=1A, IB=5mA VCE=10V, IE=–0.5A VCB=10V, f=1MHz
(Ta=25°C)
2SD2558 100max
5max
Unit µA mA
200min
V
1500 to 6500
1.5max
V
15typ
MHz
110typ
pF
External Dimensions FM100(TO3PF)
0.8±0.2
15.6±0.2
5.5±0.2 3.45 ±0.2
5.5
23.0±0.3 9.5±0.2
16.2
ø3.3±0.2 a b
3.0
1.6 3.3
1.75
2.15
1.05
+0.2 -0.1
0.8
5.45±0.1
5.45±0.1
0.65
+0.2 -0.1
3.35
1.5 4.4 1.