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2SD2557Darlington
Equivalent circuit C B (3.2kΩ)(450Ω) E
Silicon NPN Triple Diffused Planar Transistor
Application : Series Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg
2SD2557 200 200 6 5 2
70(Tc=25°C) 150
–55 to +150
Unit V V V A A W °C °C
sElectrical Characteristics
Symbol
Conditions
ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB
VCB=200V VEB=6V IC=10mA
VCE=5V, IC=1A IC=1A, IB=5mA VCE=10V, IE=–0.5A VCB=10V, f=1MHz
(Ta=25°C)
2SD2557 100max
Unit µA
5max
mA
200min
V
1500 to 6500
1.5max
V
15typ
MHz
110typ
pF
External Dimensions MT-100(TO3P)
15.6±0.4 9.6
4.8±0.2 2.0±0.1
1.8 5.0±0.2
19.9±0.3 4.0 2.0
20.0min 4.0max
a ø3.2±0.1 b
2
3
1.05
+0.2 -0.1
0.65
+0.2 -0.1
5.45±0.1
5.45±0.1
1.