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MOS FET FKV660 (under development)
Absolute Maximum Ratings (Ta=25ºC)
Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg * PW Ratings 60 ± 20 ± 50 ± 150 Unit V V A A W ºC ºC
Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 60V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A VDS = 10V f = 1.0MHz VGS = 0V ID = 25A VDD 12V RL = 0.48Ω VGS = 10V ISD = 50A, VGS = 0V min 60 +10 –5 100 2.0 11 2000 900 100 To be defined 1.0 1.5 14 Ratings typ max
(Ta=25ºC) Unit V µA µA V S mΩ pF pF pF ns ns ns ns V
External Dimensions FM20 (full-mold)
3.3±0.2 10.0±0.2 4.2±0.2
2.8 C 0.5
13.0 min
3.9
40 (Tc=25ºC) 150 –55 to +150 100µs, duty 1%
1.0 20.0
16.
FKV660 Datasheet
