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MOS FET FKV660S
Absolute Maximum Ratings (Ta=25ºC)
Symbol Ratings VDSS 60 VGSS +20, –10 ± 60 ID ± 180 ID(pulse) PD 60(Tc=25ºC) Tch 150 Tstg –40 to +150 PW 100µs, duty 1% Unit V V A A W ºC ºC
Electrical Characteristics
Symbol V(BR)DSS IGSS IDSS VTH Re (yfs) RDS(ON) Ciss Coss Crss t d(on) tr t d(off) tf VSD Test Conditions ID=100 µA, VGS=0V VGS =+20V VGS =–10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=25A VGS=10V, ID=25A VDS=10V f=1.0MHz VGS=0V ID=25A VDD 12V RL=0.48Ω, VGS=10V ISD=50A, VGS=0V min 60 Ratings typ
( Ta=25ºC) max +10 –5 100 2.5 11 2500 900 150 50 400 400 300 1.0 14 Unit V µA µA V S mΩ pF pF pF ns ns ns ns V
External Dimensions TO220S
10.2±0.3 (1.4)
4.44±0.2 1.3±0.2
1.27±0.2 +0.2 0.86 – 0.1 2.54±0.5 1.2±0.2 2.54±0.5
3.0 –0.5
+0.3
(1.5)
1.0 20
10.0 – 0.5 8.6±0.
FKV660S Datasheet
