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Schottky Barrier Diodes (Power Surface Mount)
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
30V, 40V, 60V
Others Rth ( j-c) Mass Remarks Fig. (°C/ W) (g)
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V)
max per element
Tj (°C)
IR (mA) IF (A) VR = VRM
IR (H) (mA) VR=VRM, Ta=100°C
trr
(ns) IF /IRP (mA)
max per element max per element
SPJ-63S SPB-64S SPB-G34S
30
6.0 6.0 3.0 50
0.45 3.0
3.0
30 (Tj = 125°C)
—
—
Center-tap
3.5 0.55 –40 to +150 5.0 15.0 60 6.0 60 100 60 0.6 0.7 5.0 7.5 5.0 5.0 0.75 3.0 50 (Tj = 150°C) 50 — 50 — 100/100 50 50 100/100 40
5.0
0.29
1 Chip
A
SPB-G54S MPE-24H SPB-G56S
2.5 5.0
1.04 Center-tap 0.