2SB1626 Datasheet PDF

(7 0 Ω ) E Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1626 –110 –110 –5 –6 –1 30(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C 2SB1626 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–110V VEB=–5V IC=–30mA VCE=–4V, IC=–5A IC=–5A, IB=–5mA IC=–5A, IB=–5mA VCE=–12V, IE=0.5A VCB=–10V, f=1MHz 2SB1626 –100max –100max –110min 5000min∗ –2.5max –3.0max 100typ 110typ V V 13.0min B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2495) Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA 16.9±0.3 V 8.4±0.2 µA MHz pF 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) –30 RL (Ω) 6 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –5 IB2 (mA) 5 t...