2SC3179 Datasheet PDF

2SC3179 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3179 80 60 6 4 1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2.5 B C E Application : Audio and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=80V VEB=6V IC=25mA VCE=4V, IC=1V IC=2A, IB=0.2A VCE=12V, IE=–0.2A VCB=10V, f=1MHz 100max 100max 60min 40min 0.6max 15typ 60typ External Dimensions MT-25(TO220) 3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1 2SC3179 Unit µA µA V V pF 12.0min 16.0±0.7 8.8±0.2 a b ø3.75±0.2 4.0max MHz 1.35 0.65 +0.2 -0.1 2.5 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 20 RL (Ω) 10 IC (A) 2 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 200 IB2 (mA) –200 ton (µs) 0.2typ tstg (µs) 1.9typ tf (µs) 0.29typ Weight : Approx 2.6g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 4 00 m A...