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2SC3179 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max.)@IC= 2A Complement to Type 2SA1262 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general

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Datasheet Details

Part number 2SC3179
Manufacturer INCHANGE
File Size 210.74 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max.)@IC= 2A ·Complement to Type 2SA1262 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3179 isc website:www.iscsemi.
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