Datasheet Details
| Part number | 2SC3179 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.74 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3179-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3179 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.74 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3179-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max.)@IC= 2A ·plement to Type 2SA1262 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3179 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3179 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SC3179 | Silicon NPN Transistor | Sanken electric |
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2SC3179 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
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| 2SC3171 | NPN Transistor |
| 2SC3175 | NPN Transistor |
| 2SC3177 | NPN Transistor |
| 2SC3110 | Silicon Power Transistor |
| 2SC3144 | NPN Transistor |
| 2SC3146 | NPN Transistor |
| 2SC3148 | NPN Transistor |
| 2SC3150 | NPN Transistor |
| 2SC3151 | NPN Transistor |