Datasheet Details
| Part number | 2SC3175 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.92 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3175-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3175.
| Part number | 2SC3175 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.92 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3175-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage ·High switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially suited for use in high definition CRT display(VCC=12 to 24V) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3175 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A;
| Part Number | Description |
|---|---|
| 2SC3170 | NPN Transistor |
| 2SC3171 | NPN Transistor |
| 2SC3177 | NPN Transistor |
| 2SC3179 | NPN Transistor |
| 2SC3110 | Silicon Power Transistor |
| 2SC3144 | NPN Transistor |
| 2SC3146 | NPN Transistor |
| 2SC3148 | NPN Transistor |
| 2SC3150 | NPN Transistor |
| 2SC3151 | NPN Transistor |