Inchange Semiconductor 2SC3177
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3177 |
|---|---|
| Datasheet | 2SC3177 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●With TO-126 packaging●Low collector-to-emitter saturation voltage
●Fast switching speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
●Relay drivers●High-speed inverters
●Converters
●Switching applications
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation 250 mW TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3177 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCBO Collector-Base Voltage IC=0.1mA, IE=0 VCEO Collector-Emitter Voltage IC=1mA, IB=0 VEBO Emitter-Base Voltage IE=0.1mA, IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5mA; IB=0.5mA VBE(sat) Base-Emitter Saturation Voltage IC=...