Datasheet Details
| Part number | 2SC3177 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.99 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3177-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3177 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.99 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3177-INCHANGE.pdf |
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·With TO-126 packaging ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation 250 mW TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3177 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCBO Collector-Base Voltage IC=0.1mA, IE=0 VCEO Collector-Emitter Voltage IC=1mA, IB=0 VEBO Emitter-Base Voltage IE=0.1mA, IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5mA;
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| 2SC3151 | NPN Transistor |