2SC3177
DESCRIPTION
- With TO-126 packaging
- Low collector-to-emitter saturation voltage
- Fast switching speed
- Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
- Relay drivers
- High-speed inverters
- Converters
- Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
50 m A
Collector Power Dissipation
250 m W
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC3177 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS...
