Inchange Semiconductor 2SC3170
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3170 |
|---|---|
| Datasheet | 2SC3170 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 400V(Min.)●Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A
●High Speed Switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high speed switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 15 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3170● isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3170
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=20mA; IB= VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; I...