Datasheet Details
| Part number | 2SC3170 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.60 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3170-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3170 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.60 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3170-INCHANGE.pdf |
|
|
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·Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 15 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3170 · isc website:.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3170 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=20mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SC3170 | SILICON POWER TRANSISTOR | SavantIC |
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| 2SC3144 | NPN Transistor |
| 2SC3146 | NPN Transistor |
| 2SC3148 | NPN Transistor |
| 2SC3150 | NPN Transistor |
| 2SC3151 | NPN Transistor |