2SC3679 Datasheet PDF

2SC3679 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3679 900 800 7 5(Pulse10) 2.5 100(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 75typ External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 2SC3679 Unit µA µA V V MHz pF 20.0min 19.9±0.3 4.0 a b ø3.2±0.1 4.0max V 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 125 IC (A) 2 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 IB2 (A) –1 ton (µs) 1max tstg (µs) 5max tf (µs) 1max 5.45±0.1 B C E 5.45±0.1 Weight : Approx 6.0g a. Type No. b. Lot No. I C –...