2SC3857 Datasheet PDF

2SC3857 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1493) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3857 200 200 6 15 5 150(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=5A IC=10A, IB=1A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 100max 100max 200min External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 2SC3857 Unit µA µA V a b 50min∗ 3.0max 20typ 250typ V MHz pF 20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) 60 RL (Ω) 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.5 IB2 (A) –0.5 ton (µs) 0.3typ tstg (µs) 2.4typ tf (µs) 0.4typ Weight : Approx 18.4g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 5A 1.