2SD2016 Datasheet PDF

2SD2016 Darlington Equivalent C circuit B (2kΩ) (200Ω) E Silicon NPN Triple Diffused Planar Transistor Application : Igniter, Relay and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 200 V VCEO 200 V VEBO 6 V IC 3 A IB 0.5 A PC 25(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=1.5mA IC=1A, IB=1.5mA VCE=12V, IE=–0.1A VCB=10V, f=1MHz (Ta=25°C) Ratings 10max 10max 200min 1000 to 15000 1.5max 2.0max 90typ 40typ Unit µA mA V V V MHz pF External Dimensions FM20(TO220F) 10.1±0.2 4.2±0.2 2.8 c0.5 4.0±0.2 16.9±0.3 8.4±0.2 ø3.3±0.2 a b 3.9 ±0.2 0.8±0.2 13.0min 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +0.2 -0.1 2.4±0.2 2.2±0.2 Weight : Approx 2.0g a. Part No. B C E b. Lot No. DC Current Gain hFE Collector Current IC(A) I C– V CE Characteristics (Typical) 3 3mA 1.5mA 1mA 0.5mA 2 IB=0.3mA 1 0 0 1 2 3 4 Collector-Emitter Voltag...