2SD2141 Datasheet PDF

Built-in Avalanche Diode for Surge Absorbing Darlington Equivalent circuit C 2SD2141 B (1.5kΩ)(100Ω) E Silicon NPN Triple Diffused Planar Transistor Application : Ignitor, Driver for Solenoid and Motor, and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 380±50 V VCEO 380±50 V VEBO 6 V IC 6(Pulse10) A IB 1 A PC 35(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz (Ta=25°C) Ratings Unit 10max µA 20max mA 330 to 430 V 1500min 1.5max 20typ 95typ V MHz pF External Dimensions FM20(TO220F) 10.1±0.2 4.2±0.2 2.8 c0.5 4.0±0.2 16.9±0.3 8.4±0.2 ø3.3±0.2 a b 3.9 ±0.2 0.8±0.2 13.0min 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +-00..12 2.4±0.2 2.2±0.2 Weight : Approx 2.0g a. Part No. BCE b. Lot No. Collector Current IC(A) –32105˚2˚5CC˚ ((CC(CaaCssaseeeTTTeeemmmppp))) Collector Current IC(A) I C– V CE Cha...