2SD2560 Datasheet PDF

2SD2560 Darlington Equivalent circuit C B (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) Application : Audio, Series Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) Symbol Ratings Unit Symbol Conditions Ratings Unit VCBO 150 V ICBO VCB=150V 100max µA VCEO 150 V IEBO VEB=5V 100max µA VEBO 5 V V(BR)CEO IC=30mA 150min V IC 15 A hFE VCE=4V, IC=10A 5000min∗ IB 1 A VCE(sat) IC=10A, IB=10mA 2.5max V PC 130(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 70typ MHz Tstg –55to+150 °C COB VCB=10V, f=1MHz 120typ pF ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) 40 4 10 10 –5 10 –10 0.8typ 4.0typ 1.2typ External Dimensions MT-100(TO3P) 2.0 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 4.0 19.9±0.3 20.0min 4.0max a ø3.2±0.1 b 2 3 1.05 +-00..12 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 1.4 BCE Weight : Approx 6.0g a.