Datasheet Summary
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min)
- High DC Current Gain-
: hFE= 5000( Min.) @(IC= 10A, VCE= 4V)
- Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ (IC= 10A, IB= 10mA)
- plement to Type 2SB1647
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio, series regulator and general purpose...
