2SD2560 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage-.
| Part number | 2SD2560 |
|---|---|
| Download | 2SD2560 Datasheet (PDF) |
| File Size | 212.24 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Sanken |
2SD2560 | Silicon NPN Transistor |
SavantIC |
2SD2560 | SILICON POWER TRANSISTOR |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage-.