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2SD256 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD256.

General Description

·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min) ·Collector Power Dissipation- : PC= 25W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4.0 A ICM Collector Current-Peak 6.0 A IB Base Current 1.0 A PC Collector Power Dissipation@TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD256 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;

IB= 0 40 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;

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