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FGF65A4H - Trench Field Stop IGBT

Description

The KGF65A4H, MGF65A4H, and FGF65A4H are 650 V Field Stop IGBTs.

Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction.

Thus, these Field Stop IGBTs can improve the efficiency of your circuit.

Features

  • Low Saturation Voltage.
  • High Speed Switching.
  • With Integrated Fast Recovery Diode.
  • RoHS Compliant (1) (2) (3) TO3PF-3L (1) (2) (3).
  • VCE ------------------------------------------------------ 650 V.
  • IC (TC = 100 °C) ----------------------------------------- 40 A.
  • Short Circuit Withstand Time ----------------------- 10 μs.
  • VCE(sat)-----------------------------------------------1.9 V typ.
  • tf (TJ = 175 °C) ------------------------------------ 60 ns t.

📥 Download Datasheet

Datasheet preview – FGF65A4H

Datasheet Details

Part number FGF65A4H
Manufacturer Sanken
File Size 724.31 KB
Description Trench Field Stop IGBT
Datasheet download datasheet FGF65A4H Datasheet
Additional preview pages of the FGF65A4H datasheet.

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Full PDF Text Transcription

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VCE = 650 V, IC = 40 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A4H, MGF65A4H, FGF65A4H Data Sheet Description Packages The KGF65A4H, MGF65A4H, and FGF65A4H are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction. Thus, these Field Stop IGBTs can improve the efficiency of your circuit.
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