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FGF65A4L - Trench Field Stop IGBT

General Description

KGF65A4L, MGF65A4L, and FGF65A4L are 650 V Field Stop IGBTs.

Sanken original trench structure decreases gate capacitance, and achieves low saturation voltage and switching losses reduction.

Thus, Field Stop IGBTs can improve the efficiency of your circuit.

Key Features

  • Low Saturation Voltage.
  • High Speed Switching.
  • With Integrated Fast Recovery Diode.
  • Bare lead frame: Pb-free (RoHS compliant).
  • VCE ------------------------------------------------------ 650 V.
  • IC (TC = 100 °C) ----------------------------------------- 40 A.
  • Short Circuit Withstand Time ------------------------- 5 μs (1) (2) (3) TO3PF-3L Designs (1) (2) (3).
  • VCE(sat)-----------------------------------------------1.6 V typ. w.
  • tf (TJ = 175 °C) -----.

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Datasheet Details

Part number FGF65A4L
Manufacturer Sanken
File Size 1.26 MB
Description Trench Field Stop IGBT
Datasheet download datasheet FGF65A4L Datasheet

Full PDF Text Transcription (Reference)

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VCE = 650 V, IC = 40 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A4L, MGF65A4L, FGF65A4L Data Sheet Description Package KGF65A4L, MGF65A4L, and FGF65A4L are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves low saturation voltage and switching losses reduction. Thus, Field Stop IGBTs can improve the efficiency of your circuit.