LE25FV101T Datasheet 1m Serial Flash Eeprom

Manufacturer: Sanyo Electric

Overview: CMOS LSI m LE25FV101T o .c 4U 1M (128k words × 8bits) Serial Flash EEPROM t e e h.

Datasheet Details

The LE25FV101T is a 128K x 8 CMOS sector erase, byte programmable serial Flash EEPROM.

The LE25FV101T is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology.

Breakthroughs in EEPROM cell design and process architecture attain better reliability and manufacturability pared with conventional approaches.

t EEPROM Technology CMOS Flash High Read/Write Reliability a Single 3.3-Volt Read and Write Operations Sector-write Endurance Cycles: 10 D . Sector Erase Capability: 256 Bytes per sector 10 Years Data Retention w Frequency: 10MHz Operating Self-timed Erase and Programming w Power Consumption Byte Programming: 35 µs (Max. ) w Low Active Current (Read): 25 mA (Max. ) End of Write Detection: Status Register Read 4 Preliminary Specifications Standby Current: 20 µA (Max. ) Serial Peripheral Interface.

Part Number	Description
LE25FV051T	512K Serial Flash EEPROM