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LE25FV101T - 1M Serial Flash EEPROM

General Description

The LE25FV101T is a 128K x 8 CMOS sector erase, byte programmable serial Flash EEPROM.

The LE25FV101T is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology.

Key Features

  • t EEPROM Technology CMOS Flash High Read/Write Reliability a Single 3.3-Volt Read and Write Operations Sector-write Endurance Cycles: 10 D . Sector Erase Capability: 256 Bytes per sector 10 Years Data Retention w Frequency: 10MHz Operating Self-timed Erase and Programming w Power Consumption Byte Programming: 35 µs (Max. ) w Low Active Current (Read): 25 mA (Max. ) End of Write Detection: Status Register Read 4 Preliminary Specifications Standby Current: 20 µA (Max. ) Serial Peripheral Interface.

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Datasheet Details

Part number LE25FV101T
Manufacturer Sanyo Electric
File Size 100.68 KB
Description 1M Serial Flash EEPROM
Datasheet download datasheet LE25FV101T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMOS LSI m LE25FV101T o .c 4U 1M (128k words × 8bits) Serial Flash EEPROM t e e h S Featuresa t EEPROM Technology CMOS Flash High Read/Write Reliability a Single 3.3-Volt Read and Write Operations Sector-write Endurance Cycles: 10 D . Sector Erase Capability: 256 Bytes per sector 10 Years Data Retention w Frequency: 10MHz Operating Self-timed Erase and Programming w Power Consumption Byte Programming: 35 µs (Max.) w Low Active Current (Read): 25 mA (Max.) End of Write Detection: Status Register Read 4 Preliminary Specifications Standby Current: 20 µA (Max.) Serial Peripheral Interface (S.P.I.) mode 0. Product Description The LE25FV101T is a 128K x 8 CMOS sector erase, byte programmable serial Flash EEPROM.