LE25FV101T Datasheet | Sanyo Electric

CMOS LSI m LE25FV101T o .c 4U 1M (128k words × 8bits) Serial Flash EEPROM t e e h S Features a t EEPROM Technology CMOS Flash High Read/Write Reliability a Single 3.3-Volt Read and Write Operations Sector-write Endurance Cycles: 10 D . Sector Erase Capability: 256 Bytes per sector 10 Years Data Retention w Frequency: 10MHz Operating Self-timed Erase and Programming w Power Consumption Byte Programming: 35 µs (Max.) w Low Active Current (Read): 25 mA (Max.) End of Write Detection: Status Register Read Preliminary Specifications Standby Current: 20 µA (Max.) Serial Peripheral Interface (S.P.I.) mode 0. Product Description The LE25FV101T is a 128K x 8 CMOS sector erase, byte programmable...