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2SA1319 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Hgih breakdown voltage.
  • Excellent hFE linearity.
  • Wide ASO and highly resistant to breakdown.
  • Adoption of MBIT process. Package Dimensions unit:mm 2003A [2SA1319/2SC3332] Switching Test Circuit (For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F) ( ) : 2SA1319 JEDEC : TO-92 EIAJ : SC-43 SANYO : NP B : Base C : Collector E : Emitter Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Volt.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN1334C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features · Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process.