• Part: 2SA1319
  • Description: PNP/NPN Epitaxial Planar Silicon Transistors
  • Category: Transistor
  • Manufacturer: SANYO
  • Size: 130.85 KB
Download 2SA1319 Datasheet PDF
SANYO
2SA1319
Features - Hgih breakdown voltage. - Excellent h FE linearity. - Wide ASO and highly resistant to breakdown. - Adoption of MBIT process. Package Dimensions unit:mm 2003A [2SA1319/2SC3332] Switching Test Circuit (For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F) ( ) : 2SA1319 JEDEC : TO-92 EIAJ : SC-43 SANYO : NP B : Base C : Collector E : Emitter Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (- )180 (- )160 (- )6 (- )0.7 (- )1.5 700 150 - 55 to +150 Unit V V V A A m W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product mon Base Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation...