• Part: 2SA1312
  • Description: Silicon PNP Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 536.24 KB
Download 2SA1312 Datasheet PDF
Toshiba
2SA1312
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications Unit: mm - High voltage: VCEO = - 120 V - Excellent h FE linearity: h FE (IC = - 0.1 m A)/ h FE (IC = - 2 m A) h= 0.95 (typ.) - High h FE: h FE = 200 to 700 - Low noise: NF (2) = 0.2d B (typ.), 3d B (max) at f = 1 k Hz - plementary to 2SC3324 - Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO - 120 VCEO - 120 VEBO - 5 - 100 m A - 20 m A PC (Note 1, 3) 200 m W PC (Note 2) Tj (Note...