2SA1315
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Power Amplifier Applications Power Switching Applications
Unit: mm
- -
- Low collector saturation voltage: VCE (sat) =
- 0.5 V (max) (IC =
- 1 A) High-speed switching time: tstg = 1.0 μs (typ.) plementary to 2SC3328
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating
- 80
- 80
- 5
- 2
- 1 900 150
- 55 to 150 Unit V V V A A m W °C °C
JEDEC JEITA TOSHIBA
TO-92MOD ― 2-5J1A
Note1: Using continuously under heavy loads (e.g. the application of high Weight: 0.36 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are...
