2SA1682 - PNP Epitaxial Planar Silicon Transistor

Product Overview

Sanyo Semicon Device

Part number	2SA1682
Manufacturer	Sanyo Semicon Device
File Size	40.37 KB
Description	PNP Epitaxial Planar Silicon Transistor
Datasheet	2SA1682 Datasheet
Additional preview pages of the 2SA1682 datasheet.

High breakdown voltage (VCEO≥300V).
Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ).
Excellent DC current gain ratio (hFE ratio : 1.0 typ).
Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Tempera.

📁 Similar Datasheet

Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |