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2SA1682 - PNP Epitaxial Planar Silicon Transistor

Key Features

  • High breakdown voltage (VCEO≥300V).
  • Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ).
  • Excellent DC current gain ratio (hFE ratio : 1.0 typ).
  • Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Tempera.

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Ordering number : EN3011B 2SA1682 SANYO Semiconductors DATA SHEET 2SA1682 PNP Epitaxial Planar Silicon Transistor TV Camera Deflection, High-Voltage Driver Applications Features • High breakdown voltage (VCEO≥300V). • Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ). • Excellent DC current gain ratio (hFE ratio : 1.0 typ). • Adoption of FBET process.