2SA1682
2SA1682 is PNP Epitaxial Planar Silicon Transistor manufactured by SANYO.
Features
- High breakdown voltage (VCEO≥300V).
- Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5p F typ).
- Excellent DC current gain ratio (h FE ratio : 1.0 typ).
- Adoption of FBET process.
Package Dimensions unit:mm 2018B
[2SA1682]
0.4 3
0.16 0 to 0.1
1 0.95 0.95 2 1.9 2.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain h FE1 h FE2
Gain-Bandwidth Product f T
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Votlage
VBE(sat)
- : The 2SA1682 is classified by 0.1m A h FE as follows...
