2SA1730
2SA1730 is PNP Epitaxial Planar Silicon Transistors manufactured by SANYO.
Features
- Adoption of FBET , MBIT processes.
- Large current capacity.
- Low collector-to-emitter saturation voltage.
- Fast switching speed.
- Small-sized package.
Package Dimensions unit:mm 2038
[2SA1730]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Conditions Mounted on ceramic board (250mm2×0.8mm)
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturatin Voltage Base-to-Emitter Saturation Voltage
ICBO IEBO h FE1 h FE2 f T Cob VCE(sat) VBE(sat)
VCB=- 40V, IE=0 VEB=- 3V, IC=0 VCE=- 2V, IC=- 500m A VCE=- 2V, IC=- 3A VCE=- 2V, IC=- 500m A VCB=- 10V, f=1MHz IC=- 1.5A, IB=- 75m A IC=- 1.5A, IB=- 75m A
E : Emitter C : Collector B : Base
SANYO : PCP (Bottom view)
Ratings
Unit
- 50 V
- 40 V
- 5 V
- 3 A
- 6 A
1.5 W
150 ˚C
- 55 to +150 ˚C
Ratings min typ
70- 25
300 35
-...
