• Part: 2SA1830
  • Description: PNP Epitaxial Planar Silicon Transistor
  • Category: Transistor
  • Manufacturer: SANYO
  • Size: 153.18 KB
Download 2SA1830 Datasheet PDF
SANYO
2SA1830
Features - Large current capacity (IC=2A). - High breakdown voltage (VCEO≥400V). - Possible to offer the 2SA1830/2SC4734 devices in a tape reel packaging, which facilitates automatic insertion. Package Dimensions unit:mm 2084A [2SA1830/2SC4734] ( ) : 2SA1830 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(- )300V, IE=0 Emitter Cutoff Current IEBO VEB=(- )4V, IC=0 DC Current Gain h FE VCE=(- )10V, IC=(- )100m A Gain-Bandwidth Product f T VCE=(- )10V, IC=(- )100m A Output Capacitance Collector-to-Emitter Saturation Voltage Cob VCB=(- )30V, f=1MHz VCE(sat) IC=(- )500m A, IB=(- )50m A Base-to-Emitter Saturation Voltage VBE(sat) IC=(-...