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2SA1850 - PNP/NPN Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of FBET process.
  • High Gain Bandwidth product (fT=400MHz).
  • High breakdown voltage (VCEO=120V).
  • Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.7pF/NPN, 2.2pF/PNP.
  • Usage of radial taping to meet automatic mounting. Package Dimensions unit:mm 2084 [2SA1850/2SC4824] ( ) : 2SA1850 E : Emitter C : Collector B : Base Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Em.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN4132 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1850/2SC4824 High Definition CRT Display Video Output Applications Applications · High Definition CRT Display Video Output Applications, Wide-Band Amplifier. Features · Adoption of FBET process. · High Gain Bandwidth product (fT=400MHz). · High breakdown voltage (VCEO=120V). · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.7pF/NPN, 2.2pF/PNP. · Usage of radial taping to meet automatic mounting.