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2SA1857 - PNP Epitaxial Planar Silicon Transistor

Key Features

  • High power gain : PG=25dB typ (f=100MHz).
  • High cutoff frequency : fT=750MHz typ.
  • Low collector-to-emitter saturation voltage.
  • Complementary pair with the 2SC4400. Package Dimensions unit:mm 2059A [2SA1857] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Elect.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN4644 PNP Epitaxial Planar Silicon Transistor 2SA1857 FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications Features · High power gain : PG=25dB typ (f=100MHz). · High cutoff frequency : fT=750MHz typ. · Low collector-to-emitter saturation voltage. · Complementary pair with the 2SC4400.