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2SA2025 - PNP Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of MBIT processes.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • Ultrasmall-sized package permitting applied sets to be made small and slim.
  • High allowable power dissipation. Package Dimensions unit:mm 2033A [2SA2025] 4.0 2.2 0.4 0.5 0.4 0.4 0.6 1.8 15.0 3.0 123 1.3 1.3 0.7 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emi.

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2SA2022 PNP/NPN Epitaxial Planar Silicon Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN6404 PNP Epitaxial Planar Silicon Transistor 2SA2025 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. Package Dimensions unit:mm 2033A [2SA2025] 4.0 2.2 0.4 0.5 0.4 0.4 0.6 1.8 15.0 3.0 123 1.3 1.3 0.7 0.