Large current capacity and wide ASO. 0.45
3.5
1.4max
0.6
1.27
4.0max 13.7 14.0
0.5
0.45
4.5
0.44
1 2.5
2 2.5
3
( ) : 2SA608N
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1 : Emitter 2 : Collector 3 : Base SANYO : NPA-WA
Rat.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Ordering number:ENN6324
PNP/NPN Epitaxial Planar Silicon Transistors
2SA608N/2SC536N
Low-Frequency General-Purpose Amplifier Applications
Applications
· Capable of being used in the low frequency to high frequency range.
Package Dimensions
unit:mm 2164
[2SA608N/2SC536N]
4.5 3.7
Features
· Large current capacity and wide ASO.
0.45
3.5
1.4max
0.6
1.27
4.0max 13.7 14.0
0.5
0.45
4.5
0.44
1 2.5
2 2.
2SA608N Datasheet
