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2SB1201 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of FBET, MBIT processes.
  • Large current capacitance and wide ASO.
  • Low collector-to-emitter saturation voltage.
  • Fast switching speed.
  • Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller Specifications ( ): 2SB1201 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SB1202 PNP/NPN Epitaxial Planar Silicon Transistors
2SB1203 PNP/NPN Epitaxial Planar Silicon Transistors
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2SB1205 PNP Epitaxial Planar Silicon Transistor
2SB1214 PNP Epitaxial Planar Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN2112C 2SB1201/2SD1801 SANYO Semiconductors DATA SHEET 2SB1201/2SD1801 PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller Specifications ( ): 2SB1201 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Conditions Ratings (--)60 (--)50 (--)6 (--)2 (--)4 Unit V V V A A