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2SB1270 - PNP/NPN Epitaxial Planar Type Silicon Transistors

Key Features

  • Suitable for sets whose height is restricted.
  • Low collector to emitter saturation voltage.
  • Large current capacity. Package Dimensions unit:mm 2049B [2SB1270/2SD1906] ( ) : 2SB1270 Specifications E : Emitter C : Collector B : Base SANYO :TO-220MF Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junc.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2266A PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1270/2SD1906 High-Current Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage. · Large current capacity.